NTHD4N02F datasheet(1/6 Pages) ONSEMI

部品番号	NTHD4N02F

部品情報	Power MOSFET and Schottky Diode

PDF	6 Pages

Scroll/Zoom	100%

メーカー	ONSEMI [ON Semiconductor]

ホームページ	http://www.onsemi.com

Logo

1 / 6 page

October, 2004 − Rev. 7

1

Publication Order Number:

NTHD4N02F/D

NTHD4N02F

Power MOSFET and

Schottky Diode

20 V, 3.9 A, N−Channel, with 3.7 A

Schottky Barrier Diode, ChipFET

t

Features

• Leadless SMD Package Featuring a MOSFET and Schottky Diode

• 40% Smaller than TSOP−6 Package with Better Thermals

• Super Low Gate Charge MOSFET

• Ultra Low V

F Schottky

• Pb−Free Package is Available

Applications

• Fast Switching, low Gate Charge for Dc to Dc Buck and Boost

Converters

• Li−Ion Battery Applications in Cell Phones, PDAs, DSCs, and Media

Players

• Load Side Switching

MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

20

V

Gate−to−Source Voltage

VGS

±12

V

Continuous Drain

Current

Steady

TJ = 25°C

ID

2.9

A

Current

Steady

State

TJ = 85°C

2.1

t

v 5 s TJ = 25°C

3.9

Pulsed Drain Current

tp=10 ms

IDM

12

A

Power Dissipation

Steady

TJ = 25°C

PD

0.91

W

Steady

State

TJ = 85°C

0.36

t

v 5 s TJ = 25°C

2.1

Continuous Source Current (Body Diode)

IS

2.6

A

Operating Junction and Storage

Temperature

TJ, TSTG

−55 to 150

°C

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL

260

°C

SCHOTTKY DIODE MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

VRRM

20

V

DC Blocking Voltage

VR

20

V

Average Rectified

Forward Current

Steady

State

TJ = 25°C

IF

2.2

A

t

v 5 s

TJ = 25 C

3.7

A

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

Device

Package

Shipping†

ORDERING INFORMATION

NTHD4N02FT1

ChipFET

3000/Tape & Reel

ChipFET

]

CASE 1206A

STYLE 3

http://onsemi.com

C

A

SCHOTTKY DIODE

20 V

80 m

W @ 2.5 V

60 m

W @ 4.5 V

0.35 V

RDS(on) TYP

3.9 A

3.7 A

ID MAX

V(BR)DSS

MOSFET

SCHOTTKY DIODE

VR MAX

IF MAX

VF TYP

G

D

S

N−Channel MOSFET

1

8

7

6

5

4

3

2

1

MARKING

DIAGRAM

C2 = Specific Device Code

M = Month Code

1

2

3

4

C

D

A

S

G

CONNECTIONS

NTHD4N02FT1G

ChipFET

(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

同様の部品番号 - NTHD4N02F

メーカー	部品番号	データシート	部品情報
ON Semiconductor	NTHD4N02	295Kb / 2P	Typical Uses for FETKY Devices Rev.0, Jun-2006

More results

同様の説明 - NTHD4N02F

メーカー	部品番号	データシート	部品情報
ON Semiconductor	NTHD4P02F	74Kb / 8P	Power MOSFET and Schottky Diode October, 2004 ??Rev. 4
	NTHD4P02F	83Kb / 7P	Power MOSFET and Schottky Diode November, 2005 ??Rev. 7
	NTTD4401F	86Kb / 8P	Power MOSFET and Schottky Diode January, 2007 ??Rev. 5
	NTHD3101F	140Kb / 7P	Power MOSFET and Schottky Diode March, 2006 ??Rev. 3
	NTMD4884NF	96Kb / 7P	Power MOSFET and Schottky Diode March, 2008 - Rev. 0
	NTLGF3501NT2G	93Kb / 8P	Power MOSFET and Schottky Diode March, 2006 ??Rev. 1
Kersemi Electronic Co.,...	IRF7521D1	727Kb / 8P	Power MOSFET and Schottky Diode
Will Semiconductor Ltd.	WPM2005	1Mb / 8P	Power MOSFET and Schottky Diode
	WPM2005B	2Mb / 6P	Power MOSFET and Schottky Diode
	WPM2006	920Kb / 8P	Power MOSFET and Schottky Diode