STB13N60M2 datasheet(1/23 Pages) STMICROELECTRONICS

部品番号	STB13N60M2

部品情報	Extremely low gate charge

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September 2016

DocID024569 Rev 4

1/23

This is information on a product in full production.

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STB13N60M2,

STD13N60M2

N-

channel 600 V, 0.35 Ω typ., 11 A

MDmesh™ M2 Power MOSFETs in D2PAK and DPAK packages

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS@TJMAX.

RDS(on) max.

ID

STB13N60M2

650 V

0.38 Ω

11 A

STD13N60M2



Extremely low gate charge



Excellent output capacitance (COSS) profile



100% avalanche tested



Zener-protected

Applications



Switching applications

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, these devices exhibit low on-resistance

and optimized switching characteristics,

rendering them suitable for the most demanding

high efficiency converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STB13N60M2

13N60M2

D2PAK

Tape and reel

STD13N60M2

DPAK

D(2, TAB)

G(1)

S(3)

AM01476v1_tab

同様の部品番号 - STB13N60M2

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STB13N80K5	1Mb / 20P	N-channel 800 V, 0.37, 12 A Zener-protected SuperMESH 5 Power MOSFET in D짼PAK, TO-220FP and TO-220 packages 15-Apr-2013
STMicroelectronics	STB13N80K5	1Mb / 23P	N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 25-Sep-2017
Inchange Semiconductor ...	STB13N80K5	350Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STB13N80K5	1Mb / 23P	N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 25-Sep-2017
STMicroelectronics	STB13NK60	657Kb / 14P	N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET Feb-2003

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同様の説明 - STB13N60M2

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