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IRKT41/04AS90 データシート(PDF) 3 Page - International Rectifier

部品番号 IRKT41/04AS90
部品情報  THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
PDF  10 Pages
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRKT41/04AS90 データシート(HTML) 3 Page - International Rectifier

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IRK.41, .56 Series
3
Bulletin I27131 rev. G 10/02
www.irf.com
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
T
J
Junction operating
temperature range
T
stg
Storage temp. range
- 40 to 125
R
thJC
Max. internal thermal
resistance, junction
0.23
0.20
Per module, DC operation
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
5
busbar
3
wt
Approximate weight
110 (4)
gr (oz)
Case style
TO-240AA
JEDEC
Thermal and Mechanical Specifications
Parameters
IRK.41
IRK.56
Units
Conditions
- 40 to 125
0.1
(5) Available with dv/dt = 1000V/
µs, to complete code add S90 i.e. IRKT41/16AS90.
°C
K/W
Nm
Mounting surface flat, smooth and greased
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
at VRRM, VDRM
2500 (1 min)
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt
Max. critical rate of rise
T
J
= 125oC, linear to 0.67 V
DRM
,
of off-state voltage (5)
gate open circuit
15
mA
T
J
= 125 oC, gate open circuit
500
V/
µs
Blocking
V
INS
RMS isolation voltage
V
Triggering
P
GM
Max. peak gate power
10
10
P
G(AV)
Max. average gate power
2.5
2.5
I
GM
Max. peak gate current
2.5
2.5
A
-V
GM
Max. peak negative
gate voltage
4.0
TJ = - 40°C
2.5
TJ = 25°C
1.7
TJ = 125°C
270
TJ = - 40°C
150
mA
TJ = 25°C
80
TJ = 125°C
V
GD
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
Parameters
IRK.41
IRK.56
Units
Conditions
0.25
V
6mA
Anode supply = 6V
resistive load
V
GT
Max. gate voltage
required to trigger
Anode supply = 6V
resistive load
I
GT
Max. gate current
required to trigger
W
V
10
T
J
= 125oC,
rated V
DRM
applied
T
J
= 125oC,
rated V
DRM
applied
Parameters
IRK.41
IRK.56
Units
Conditions
Sine half wave conduction
Rect. wave conduction
Devices
Units
180o
120o
90o
60o
30o
180o
120o
90o
60o
30o
IRK.41
0.11
0.13
0.17
0.23
0.34
0.09
0.14
0.18
0.23
0.34
IRK.56
0.09
0.11
0.13
0.18
0.27
0.07
0.11
0.14
0.19
0.28
°C/W
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)



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