STF16N60M2 datasheet(5/13 Pages) STMICROELECTRONICS

部品番号	STF16N60M2

部品情報	Extremely low gate charge

PDF	13 Pages

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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5 / 13 page

STF16N60M2

Electrical characteristics

DocID027170 Rev 1

5/13

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

(1)

Source-drain current

(pulsed)

VSD

(2)

Forward on voltage

VGS = 0 V, ISD = 12 A

1.6

trr

Reverse recovery time

ISD = 12 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16:

"Test circuit for inductive load

switching and diode recovery

times")

316

Qrr

Reverse recovery charge

3.25

µC

IRRM

Reverse recovery current

20.5

trr

Reverse recovery time

ISD = 12 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

454

Qrr

Reverse recovery charge

4.8

µC

IRRM

Reverse recovery current

Notes:

(1)

Pulse width is limited by safe operating area.

(2)

Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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