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STGP19NC60S データシート(PDF) 9 Page - STMicroelectronics

部品番号 STGP19NC60S
部品情報  20 A, 600 V fast IGBT
PDF  15 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP19NC60S データシート(HTML) 9 Page - STMicroelectronics

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STGB19NC60S, STGP19NC60S
Electrical characteristics
Doc ID 13688 Rev 5
9/15
2.2
Frequency applications
For a fast IGBT suitable for high frequency applications, the typical collector current vs.
maximum operating frequency curve is reported. That frequency is defined as follows:
fMAX = (PD - PC) / (EON + EOFF)
●
The maximum power dissipation is limited by maximum junction to case thermal
resistance:
Equation 1
PD = ΔT / RTHJ-C
considering
ΔT = TJ - TC = 125 °C- 75 °C = 50°C
●
The conduction losses are:
Equation 2
PC = IC * VCE(SAT) * δ
with 50% of duty cycle, VCESAT typical value @125°C.
●
Power dissipation during ON & OFF commutations is due to the switching frequency:
Equation 3
PSW = (EON + EOFF) * freq.
Typical values @ 125°C for switching losses are used (test conditions: VCE = 480V,
VGE=15V, RG = 10 Ohm). Furthermore, diode recovery energy is included in the EON (see
Note 1), while the tail of the collector current is included in the EOFF measurements.



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