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STGP30V60DF データシート(PDF) 6 Page - STMicroelectronics

部品番号 STGP30V60DF
部品情報  Low thermal resistance
PDF  22 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP30V60DF データシート(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
6/22
DocID024361 Rev 4
Figure 8. Collector current vs. switching
frequency
Figure 9. Forward bias safe operating area
Figure 10. Transfer characteristics
Figure 11. Diode VF vs. forward current
Figure 12. Normalized VGE(th) vs junction
temperature
Figure 13. Normalized V(BR)CES vs. junction
temperature
IC
40
30
10
0
1
(A)
10
50
60
f(kHz)
20
70
80
TC=80°C
TC=100°C
rectangular current shape,
(duty cycle=0.5, Vcc= 400V Rg=10Ω,
Vge=0/15V, Tj=175 °C)
AM17415v1
IC
100
10
0.1
0.01
1
(A)
10
VCE(V)
1
10μs
100μs
1ms
100
Single pulse, Tc=25°C
Tj<175°C, VGE=15V
AM17416v1
IC
80
60
20
0
7
(A)
8
VGE(V)
40
Tj=175°C
Tj=25°C
Tj=-40°C
9
100
10
11
AM17417v1
VF
1.9
1.1
10
(A)
20
IF(A)
1.5
Tj=175°C
Tj=25°C
Tj=-40°C
30
2.3
40
50
60
AM17418v1
VGE(th)
0.8
0.6
-50
(norm)
TC(°C)
0.7
0
0.9
1.0
50
100
150
VCE=VGE
IC=1mA
AM17419v1
V(BR)CES
1.1
0.9
-50
(norm)
TC(°C)
1.0
0
50
100
150
IC=2mA
AM17420v1



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