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STGWT20H60DF データシート(PDF) 1 Page - STMicroelectronics |
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STGWT20H60DF データシート(HTML) 1 Page - STMicroelectronics |
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1 / 17 page ![]() This is information on a product in full production. June 2013 DocID024745 Rev 1 1/17 17 STGW20H60DF, STGWT20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Figure 1. Internal schematic diagram Features • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS, PFC Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. TO-247 TO-3P 1 2 3 1 2 3 TAB C (2, TAB) E (3) G (1) Table 1. Device summary Order codes Marking Packages Packaging STGW20H60DF GW20H60DF TO-247 Tube STGWT20H60DF GWT20H60DF TO-3P Tube www.st.com |
同様の部品番号 - STGWT20H60DF |
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同様の説明 - STGWT20H60DF |
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