STS10DN3LH5 datasheet(5/13 Pages) STMICROELECTRONICS

部品番号	STS10DN3LH5

部品情報	Very low switching gate charge

PDF	13 Pages

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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5 / 13 page

STS10DN3LH5

Electrical characteristics

Doc ID 15624 Rev 1

5/13

Table 6.

Switching on/off (resistive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD = 15 V, ID = 5 A,

RG = 4.7 Ω, VGS = 10 V

(Figure 13 and Figure 18)

td(off)

Turn-off delay time

Fall time

VDD = 15 V, ID = 5 A,

RG = 4.7 Ω, VGS = 10 V

(Figure 13 and Figure 18)

2.8

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5 %

Source-drain current

(pulsed)

VSD

Forward on voltage

ISD = 5 A, VGS = 0

-1.1

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 10 A, VDD = 25 V

di/dt = 100 A/µs,

(Figure 15)

16.2

7.8

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