T835T-8FP datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

T835T-8FP

4/9

DocID024248 Rev 2

Figure 5. On-state characteristics (maximum

values)

Figure 6. Surge peak on-state current versus

number of cycles

ITM(A)

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Tj max :

Vto = 0.85 V

Rd = 57 mW

Tj = 150 °C

Tj = 25 °C

VTM(V)

I(A)

TSM

100

1000

Non repetitive

j initial=25 °C

Repetitive

C= 113 °C

One cycle

t = 20 ms

Number of cycles

Figure 7. Non repetitive surge peak on-state

current and corresponding values of I2t

Figure 8. Relative variation of gate trigger

current and gate voltage versus junction

temperature (typical values)

(A), I²t (A²s)

TSM

100

1000

0.01

0.10

1.00

10.00

dI/dt limitation: 100 A/µs

TSM

I²t

j initial=25 °C

t(ms)

Sinusoidal pulse with width t <10 ms

V [T ] / V [T = 25 °C]

I [T ] / I [T = 25 °C],

Tj(°C)

0.0

0.5

1.0

1.5

2.0

-50

-25

100

125

150

GT Q1-Q2

GT Q3

Typical values

Figure 9. Relative variation of static dV/dt

immunity versus junction temperature (typical

values)

Figure 10. Relative variation of holding and

latching current versus junction temperature

(typical values)

dV/dt [T

j]/ dV/dt [T j=15

°C]

100

125

150

D=VR=402V

(dV/dt) > 5KV/µs

Tj(°C)

I , I [T ] / I , I [T = 25 °C]

T (°C)

0.0

0.5

1.0

1.5

2.0

-50

-25

100

125

150

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