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TRD136D データシート(PDF) 1 Page - STMicroelectronics |
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TRD136D データシート(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() Preliminary data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. June 2011 Doc ID 018979 Rev 1 1/12 12 TRD136D High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode Applications ■ Electronic ballast for fluorescent lighting ■ Electronic transformer for halogen lamps Description This device is an NPN power transistor manufactured using high voltage multi epitaxial planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA. Figure 1. Internal schematic diagram TO-252 (DPAK) 1 3 Table 1. Device summary Part number Marking Package Packaging TRD136DT4 TRD136D TO-252 Tape and reel www.st.com |
同様の部品番号 - TRD136D |
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同様の説明 - TRD136D |
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