STM32F779IGH7 datasheet(145/255 Pages) STMICROELECTRONICS

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STM32F777xx STM32F778Ax STM32F779xx

Electrical characteristics

224

5.3.10

Internal clock source characteristics

The parameters given in Table 45 and Table 46 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 17.

High-speed internal (HSI) RC oscillator

Figure 32. ACCHSI versus temperature

1. Guaranteed by characterization results.

Table 45. HSI oscillator characteristics (1)

1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI

HSI user trimming step(2)

2. Guaranteed by design.

Accuracy of the HSI oscillator

TA = –40 to 105 °C(3)

3. Guaranteed by characterization results.

4.5

TA = –10 to 85 °C(3)

TA = 25 °C(4)

4. Factory calibrated, parts not soldered.

tsu(HSI)(2) HSI oscillator startup time

2.2

μs

IDD(HSI)(2) HSI oscillator power consumption

μA

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