ATF-331M4 datasheet(4/15 Pages) BOARDCOM

4 / 15 page

ATF-331M4 Typical Performance Curves

Notes:

1. Measurements made on fixed tuned

production test board that was tuned

for optimal gain match with reasonable

noise figure at 4V 60 mA bias. This circuit

represents a trade-off between an optimal

noise match, maximum gain match and

a realizable match based on production

test board requirements. Circuit losses

have been de-embedded from actual

measurements.

Quiescent drain current, Idsq, is set

with zero RF drive applied. As P1dB is

approached, the drain current may increase

or decrease depending on frequency and

dc bias point. At lower values of Idsq the

device is running closer to class B as power

output approaches P1dB. This results in

higher P1dB and higher PAE (power added

efficiency) when compared to a device that

is driven by a constant current source as is

typically done with active biasing.

Figure 8. P1dB vs. Bias[1,2] 2 GHz.

Idsq (mA)

100

Figure 10. NF & Gain vs. Bias[1] at 2 GHz.

Id (mA)

100

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Figure 6. OIP3, IIP3 & Bias[1] at 2 GHz.

Ids (mA)

100

Figure 7. OIP3, IIP3 & Bias[1] at 900 MHz.

Ids (mA)

100

Figure 9. P1dB vs. Bias[1] 900 MHz.

Idsq (mA)

100

Figure 11. NF & Gain vs. Bias[1] at 900 MHz.

Id (mA)

120

100

1.4

1.2

1.0

0.8

0.6

0.4

0.2

ATF-331M4 データシート(PDF) 4 Page - Broadcom Corporation.

ATF-331M4 データシート(HTML) 4 Page - Broadcom Corporation.

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

データシートダウンロード