MDF1921 datasheet(1/6 Pages) MGCHIP

部品番号	MDF1921

部品情報	Single N-channel Trench MOSFET 100V, 60A, 4.8m(ohm)

PDF	6 Pages

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メーカー	MGCHIP [MagnaChip Semiconductor.]

ホームページ	http://www.magnachip.co.kr

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1 / 6 page

Mar. 2014. Version 1.1

MagnaChip Semiconductor Ltd.

1

Absolute Maximum Ratings (Ta = 25

oC)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

(1)

TC=25

oC

ID

60

A

TC=100

oC

38

Pulsed Drain Current

IDM

240

Power Dissipation

TC=25

oC

PD

36

W

TC=100

oC

15

Single Pulse Avalanche Energy

(2)

EAS

200

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(1)

RθJA

62.5

oC/W

Thermal Resistance, Junction-to-Case

RθJC

3.5

MDF1921

Single N-channel Trench MOSFET 100V, 60A, 4.8m

Ω

Features



VDS = 100V



ID = 60A @VGS = 10V



RDS(ON)

< 4.8

mΩ @VGS = 10V



100% UIL Tested



100% Rg Tested

General Description

The MDF1921 uses advanced MagnaChip

’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDF1921 is suitable device for Synchronous

Rectification for Server / Adapter and general purpose

applications.

TO-220F

D

G

S

同様の部品番号 - MDF1921

メーカー	部品番号	データシート	部品情報
MagnaChip Semiconductor...	MDF1922	935Kb / 6P	Single N-channel Trench MOSFET 100V, 40A, 8.7m(ohm)
MagnaChip Semiconductor...	MDF1922TH	935Kb / 6P	Single N-channel Trench MOSFET 100V, 40A, 8.7m(ohm)

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