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ESDALCL6-4P6A データシート(PDF) 2 Page - STMicroelectronics |
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ESDALCL6-4P6A データシート(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Characteristics ESDALCL6-4P6A 2/7 Doc ID 023869 Rev 1 1 Characteristics Figure 2. Electrical characteristics (definitions) Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP Peak pulse voltage IEC 61000-4-2 contact discharge IEC 61000-4-2 air discharge 15 30 kV PPP (1) 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Peak pulse power dissipation (8/20 µs) I/O to GND 90 W IPP Peak pulse current (8/20 µs) I/O to GND 5A Tj Maximum junction temperature range -55 to +150 °C Tstg Storage temperature range -65 to +150 °C TL Maximum lead temperature for soldering during 10 s 260 °C Table 2. Electrical characteristics (values, Tamb = 25 °C) Symbol Test condition Min. Typ. Max. Unit VBR IR = 1 mA 6 V IRM VRM = 3 V, I/O to GND 10 nA VRM = 1 V, I/O to GND 1 Cline F = 1 MHz, VR = 0 V 2.5 pF Symbol Parameter V = Breakdown voltage I = Leakage current at V V = Stand-off voltage I = Peak pulse current I = Breakdown current BR RM RM RM PP R V = Clamping voltage I = Forward current C = Input capacitance per line CL F line I V I F I RM I PP V RM V F V BR Slope = 1/Rd V CL |
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