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BUX22 データシート(PDF) 2 Page - STMicroelectronics

部品番号 BUX22
部品情報  HIGH CURRENT NPN SILICON TRANSISTOR
PDF  4 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUX22 データシート(HTML) 2 Page - STMicroelectronics

  BUX22 Datasheet HTML 1Page - STMicroelectronics BUX22 Datasheet HTML 2Page - STMicroelectronics BUX22 Datasheet HTML 3Page - STMicroelectronics BUX22 Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
0.5
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 200 V
3
mA
ICEX
Collector Cut-off
Current
VCE = 300 V
VBE = -1.5V
Tcase = 125
oC
VCE = 300 V
VBE = -1.5V
3
12
mA
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
1
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
IC = 200 mA
250
V
VEBO
Emitter-Base Voltage
(IC = 0)
IE = 50 mA
7
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 10 A
IB = 1 A
IC = 20 A
IB = 2.5 A
0.2
0.32
1
1.5
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 20 A
IB = 2.5 A
1.1
1.5
V
hFE
∗
DC Current Gain
IC = 10 A
VCE = 4 V
IC = 20 A
VCE = 4 V
20
10
60
IS/b
Second Breakdown
Collector Current
VCE = 140 V
t = 1 s
VCE = 20 V
t = 1 s
0.15
17.5
A
A
fT
Transistor Frequency
VCE = 15 V
IC = 2 A
f = 10 MHz
10
MHz
ton
Turn-on Time
IC = 20 A
IB1 = 2.5 A
VCC = 100 V
0.22
1.3
µs
ts
tf
Storage Time
Fall Time
IC = 20 A
IB1 = 2.5 A
IB2 = - 2.5 A
VCC = 100V
1.5
0.17
2
0.5
µs
µs
Clamped Es/b
Collector Current
Vclamp= 250 V
L = 500
µH
25
A
∗ Pulsed: Pulse duration = 300µs, duty cycle
≤ 2 %
BUX22
2/4



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