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SP3222EB データシート(PDF) 2 Page - Sipex Corporation |
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SP3222EB データシート(HTML) 2 Page - Sipex Corporation |
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2 / 20 page ![]() Rev. A Date:12/11/03 SP3222EB/3232EB True +3.0 to +5.5V RS-232 Transceivers © Copyright 2003 Sipex Corporation 2 NOTE 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V. NOTE 2: Driver Input hysteresis is typically 250mV. ABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability and cause permanent damage to the device. V CC ...................................................... -0.3V to +6.0V V+ (NOTE 1) ...................................... -0.3V to +7.0V V- (NOTE 1) ....................................... +0.3V to -7.0V V+ + |V-| (NOTE 1) ........................................... +13V I CC (DC VCC or GND current) ......................... ±100mA Input Voltages TxIN, EN ............................................ -0.3V to +6.0V RxIN .................................................................. ±25V Output Voltages TxOUT ........................................................... ±13.2V RxOUT ..................................... -0.3V to (V CC + 0.3V) Short-Circuit Duration TxOUT .................................................... Continuous Storage Temperature ...................... -65°C to +150°C Power Dissipation Per Package 20-pin SSOP (derate 9.25mW/oC above +70oC) ........ 750mW 18-pin PDIP (derate 15.2mW/oC above +70oC) ....... 1220mW 18-pin SOIC (derate 15.7mW/oC above +70oC) ....... 1260mW 20-pin TSSOP (derate 11.1mW/oC above +70oC) ...... 890mW 16-pin SSOP (derate 9.69mW/oC above +70oC) ........ 775mW 16-pin PDIP (derate 14.3mW/oC above +70oC) ....... 1150mW 16-pin Wide SOIC (derate 11.2mW/oC above +70oC) .... 900mW 16-pin TSSOP (derate 10.5mW/oC above +70oC) ...... 850mW 16-pin nSOIC (derate 13.57mW/°C above +70°C) ...... 1086mW SPECIFICATIONS Unless otherwise noted, the following specifications apply for VCC = +3.0V to +5.5V with TAMB = TMIN to TMAX, C1 to C4=0.1µF PARAMETER MIN. TYP. MAX. UNITS CONDITIONS DC CHARACTERISTICS Supply Current 0.3 1.0 mA no load, TAMB = +25°C, VCC = 3.3V, TxIN = VCC or GND Shutdown Supply Current 1.0 10 µA SHDN = GND, TAMB = +25°C, VCC = +3.3V, TxIN = VCC or GND LOGIC INPUTS AND RECEIVER OUTPUTS Input Logic Threshold LOW GND 0.8 V TxIN, EN, SHDN, Note 2 Input Logic Threshold HIGH 2.0 VCC VVCC = 3.3V, Note 2 2.4 V VCC = 5.0V, Note 2 Input Leakage Current ±0.01 ±1.0 µA TxIN, EN, SHDN, TAMB = +25°C, VIN = 0V to VCC Output Leakage Current ±0.05 ±10 µA receivers disabled, VOUT = 0V to VCC Output Voltage LOW 0.4 V IOUT = 1.6mA Output Voltage HIGH VCC-0.6 VCC-0.1 V IOUT = -1.0mA DRIVER OUTPUTS Output Voltage Swing ±5.0 ±5.4 V 3kΩ load to ground at all driver outputs, TAMB = +25°C Output Resistance 300 Ω VCC = V+ = V- = 0V, TOUT = +2V Output Short-Circuit Current ±35 ±60 mA VOUT = 0V Output Leakage Current ±25 µAVOUT = ±12V,VCC= 0V, or 3.0V to 5.5V, drivers disabled |
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