MP6759 datasheet(2/6 Pages) TOSHIBA

部品番号	MP6759

部品情報	TOSHIBA GTR Module Silicon N Channel IGBT

PDF	6 Pages

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メーカー	TOSHIBA [Toshiba Semiconductor]

ホームページ	http://www.semicon.toshiba.co.jp/eng

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2 / 6 page

MP6759

2002-11-20

Equivalent Circuit

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGES

VGE = ±20 V, VCE = 0 V

―

±200

Collector cut-off current

ICES

VCE = 600 V, VGE = 0 V

―

Gate-emitter cut-off voltage

VGE (off)

IC = 1 mA, VCE = 5 V

―

Collector-emitter saturation voltage

VCE (sat)

IC = 10 A, VGE = 15 V

―

2.1

2.7

Input capacitance

Cies

VCE = 10 V, VGE = 0 V, f = 1 MHz

―

720

―

Rise time

―

0.3

―

Turn-on time

ton

―

0.4

―

Fall time

―

0.2

0.35

Switching time

Turn-off time

toff

―

0.4

―

µs

Forward voltage

IF = 10 A, VGE = 0 V

―

2.0

Reverse recovery time

trr

IF = 10 A, di/dt = −100 A/µs

―

200

Transistor

―

3.09

Thermal resistance

Rth (j-c)

Diode

―

4.77

°C/W

−15 V

15 V

0 V

300 V

100 Ω

(BU)

(BX)

(BV)

(BY)

(BW)

(BZ)

−

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