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SW38N65K データシート(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

部品番号 SW38N65K
部品情報  N-channel Enhanced mode TO-247 MOSFET
PDF  6 Pages
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メーカー  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
ホームページ  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW38N65K データシート(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
SW38N65K
Jun. 2016. Rev. 3.0
2/6
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS=0V, ID=250uA
650
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
I
D=250uA, referenced to 25
oC
0.6
V/oC
I
DSS
Drain to source leakage current
V
DS=650V, VGS=0V
1
uA
V
DS=520V, TC=125
oC
50
uA
I
GSS
Gate to source leakage current, forward
V
GS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
V
GS=-30V, VDS=0V
-100
nA
On characteristics
V
GS(TH)
Gate threshold voltage
V
DS=VGS, ID=250uA
2
5
V
R
DS(ON)
Drain to source on state resistance
V
GS=10V, ID=19A
0.09
0.11
Ω
G
fs
Forward transconductance
V
DS=30V, ID=19A
25
S
Dynamic characteristics
C
iss
Input capacitance
V
GS=0V, VDS=200V, f=1MHz
3640
pF
C
oss
Output capacitance
117
C
rss
Reverse transfer capacitance
17
t
d(on)
Turn on delay time
V
DS=325V, ID=38A，VGS=10V,
R
G=25Ω
(note 4,5)
44
ns
t
r
Rising time
64
t
d(off)
Turn off delay time
209
t
f
Fall time
58
Q
g
Total gate charge
V
DS=520V, VGS=10V, ID=38A
(note 4,5)
96
nC
Q
gs
Gate-source charge
27
Q
gd
Gate-drain charge
44
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
S
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
38
A
I
SM
Pulsed source current
152
A
V
SD
Diode forward voltage drop.
I
S=38A, VGS=0V
1.4
V
t
rr
Reverse recovery time
I
S=20A, VGS=0V,
dI
F/dt=100A/us
1603
ns
Q
rr
Reverse recovery charge
31
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L =25 mH, I
AS =8A, VDD = V, RG=25Ω, Starting TJ = 25
oC
3.
I
SD ≤ 20A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25
oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.



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