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Jun. 2016. Rev. 3.0

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SW47N65KF

N-channel Enhanced mode TO-247 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

650

V

I

D

Continuous drain current (@T

47*

A

Continuous drain current (@T

29.6*

A

I

DM

Drain current pulsed

(note 1)

188

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

1500

mJ

E

AR

Repetitive avalanche energy

(note 1)

150

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

312.5

W

2.5

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

0.4

R

thja

Thermal resistance, Junction to ambient

39

*. Drain current is limited by junction temperature.

BV

I

D

: 47A

R

1. Gate 2. Drain 3. Source

TO-247

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW T 47N65KF

SW47N65KF

TO-247

TUBE

1

2

3

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 152nC)

 Extremely Low trr and Qrr

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:LED, UPS, Charge, Servicer

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.