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Oct. 2015. Rev. 2.0

1/6

N-channel Enhancement mode TO-251 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain to Source Voltage

60

V

60*

A

37.8*

A

Drain current pulsed

(note 1)

240

A

Gate to Source Voltage

±20

V

Single pulsed Avalanche Energy

(note 2)

228

mJ

Repetitive Avalanche Energy

(note 1)

25

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

119

W

0.95

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

Thermal resistance, Junction to case

1.05

Thermal resistance, Case to Sink

0.5

Thermal resistance, Junction to ambient

84

BV

I

D

: 60A

R

Ω@V

14.4m

Ω@V

1

2

3

SW60N06V1

1 2

3

1. Gate 2. Drain 3. Source

TO-251

Item

Sales Type

Marking

Package

Packaging

1

SW I 60N06V1

SW60N06V1

TO-251

TUBE

Order Codes

*. Drain current is limited by junction temperature.

Features

 High ruggedness

 R

 R

 Gate Charge (Typ 72nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: DC-CD,Motor Control,

Synchronous Rectification

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.