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SW69N65K2

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

650

V

I

D

Continuous drain current (@T

69*

A

Continuous drain current (@T

43*

A

I

DM

Drain current pulsed

(note 1)

276

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

2335

mJ

E

AR

Repetitive avalanche energy

(note 1)

235

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

625

W

5

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

0.2

R

thja

Thermal resistance, Junction to ambient

36

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW T 69N65K2

SW69N65K2

TO-247

TUBE

N-channel Enhanced mode TO-247 MOSFET

Features

 High ruggedness

 Low R

Low Gate Charge (Typ 181nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Charge,LED,PC Power

General Description

This power MOSFET is produced with super junction advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 69A

R

1

2

3

TO-247

1

2

3