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AT28C64B データシート(PDF) 1 Page - ATMEL Corporation |
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AT28C64B データシート(HTML) 1 Page - ATMEL Corporation |
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1 / 13 page  1 Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times – Page Write Cycle Time: 10 ms Maximum – 1 to 64-byte Page Write Operation • Low Power Dissipation – 40 mA Active Current – 100 µA CMOS Standby Current • Hardware and Software Data Protection • DATA Polling and Toggle Bit for End of Write Detection • High Reliability CMOS Technology – Endurance: 100,000 Cycles – Data Retention: 10 Years • Single 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC Approved Byte-wide Pinout • Commercial and Industrial Temperature Ranges Description The AT28C64B is a high-performance electrically-erasable and programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 220 mW. When the device is deselected, the CMOS standby current is less than 100 µA. 64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection AT28C64B Rev. 0270H–12/99 Pin Configurations Pin Name Function A0 - A12 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs NC No Connect DC Don’t Connect PDIP, SOIC Top View 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 NC A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND VCC WE NC A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 TSOP Top View 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 OE A11 A9 A8 NC WE VCC NC A12 A7 A6 A5 A4 A3 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 PLCC Top View Note: PLCC package pins 1 and 17 are DON’T CONNECT. 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A6 A5 A4 A3 A2 A1 A0 NC I/O0 A8 A9 A11 NC OE A10 CE I/O7 I/O6 (continued) |
同様の部品番号 - AT28C64B |
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同様の説明 - AT28C64B |
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