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BDT61AF データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 BDT61AF
部品情報  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDT61AF データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
BDT61AF
DESCRIPTION
·
High DC Current Gain
·
Low Saturation Voltage
·
Complement to Type BDT60AF
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICP
Collector Current-Peak
6
A
IB
Base Current-Continuous
0.1
A
PC
Collector Power Dissipation
@ Ta=25℃
17
W
Collector Power Dissipation
@ TC=25℃
25
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
5
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
7.35
℃
/W


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