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BU508D データシート(PDF) 2 Page - Micro Electronics |
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BU508D データシート(HTML) 2 Page - Micro Electronics |
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2 / 8 page ![]() THERMAL DATA TO-3 T O-218 ISOW AT T218 Rthj-ca se Thermal Resistance Junction-case Max 1 1 2.5 oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symbo l Parameter T est Con ditio ns Min . T yp. Max. Uni t ICES Collector Cut -off Current (VBE =0) VCE = 1500 V VCE = 1500 V Tj = 125 oC 1 2 mA mA IEBO Emitter Cut- off Current (IC =0) VEB = 5 V 300 mA VCE(sat) ∗ Collector-Emitter Sat uration Voltage IC =4.5 A IB =2 A 1 V VCEO(s us) Collector-Emitt er Sustaining Voltage IC =100 mA 700 V VBE(sat) ∗ Base-Emitter Sat uration Voltage IC =4.5 A IB = 2 A 1.3 V ts tf INDUCT IVE LOAD Storage Time Fall Time IC =4.5 A hFE =2.5 VCC =140 V LC =0.9 mH LB =3 µH7 550 µs ns VF Diode F orward Volt age IF =4 A 2 V fT Transition Frequency IC =0.1 A VCE = 5 V f = 5 MHz 7 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area (TO-3) Safe Operating Area (TO-218/ISOWATT218) BU208D/508D/508DFI 2/8 |
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