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DF051 データシート(PDF) 2 Page - Dynex Semiconductor |
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DF051 データシート(HTML) 2 Page - Dynex Semiconductor |
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2 / 7 page ![]() 2/7 www.dynexsemi.com DF051 SURGE RATINGS Conditions Max. Units 14.0 kA 980 x 103 A 2s I 2t for fusing I 2t Surge (non-repetitive) forward current I FSM Parameter Symbol 10ms half sine; with 0% V RRM, Tj = 150 oC 11.2 kA 627 x 103 A 2s I 2t for fusing I 2t Surge (non-repetitive) forward current I FSM 10ms half sine; with 50% V RRM, Tj = 150 oC THERMAL AND MECHANICAL DATA dc Conditions Max. Units oC/W - 0.034 Anode dc Clamping force 23.5kN with mounting compound Thermal resistance - case to heatsink R th(c-h) 0.003 Double side - Single side Thermal resistance - junction to case R th(j-c) Single side cooled Symbol Parameter - 0.006 oC/W oC/W Cathode dc - 0.038 oC/W Double side cooled - 0.018 oC/W T stg Storage temperature range -55 150 oC kN 25.0 21.0 Clamping force - T vj Virtual junction temperature On-state (conducting) - 150 oC Min. CURRENT RATINGS Symbol Parameter Conditions Double Side Cooled I F(AV) Mean forward current I F(RMS) RMS value I F Continuous (direct) forward current Single Side Cooled (Anode side) I F(AV) Mean forward current I F(RMS) RMS value I F Continuous (direct) forward current Units Max. Half wave resistive load, T case = 65 oC 1490 A T case = 65 oC 2340 A T case = 65 oC 2160 A Half wave resistive load, T case = 65 oC 995 A T case = 65 oC 1560 A T case = 65 oC 1390 A |
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