HTB150-P datasheet(1/3 Pages) LEM

部品番号	HTB150-P

部品情報	Current Transducer HTB 50 .. 400 - P and HTB 50 .. 100 - TP

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メーカー	LEM [LEM]

ホームページ	http://www.lem.co.jp/HQ/en

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1 / 3 page

120425/12

LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice.

www.lem.com

Page 1/3

I

PN = 50 .. 400 A

Features

● Hall effect measuring principle

● Galvanic isolation between

primary and secondary circuit

● Isolation voltage 2500 V

● Low power consumption

● Wide power supply: ± 12 ..15 V

● Primary bus bar option for 50

A and 100 A version for ease of

connection

Advantages

● Small size and space saving

● Only one design for wide current

ratings range

● High immunity to external

interference.

Applications

● AC variable speed drives

● Static converters for DC motor

drives

● Battery supplied applications

● Uninterruptible Power Supplies

(UPS)

● Switched Mode Power Supplies

(SMPS)

● Power supplies for welding

applications

Application domain

● Industrial

Current Transducer HTB 50 .. 400 - P

and HTB 50 .. 100 - TP

For the electronic measurement of currents: DC, AC, pulsed...,

with a galvanic isolation between the primary circuit (high power) and

the secondary circuit (electronic circuit).

Electrical data

Primary nominal

Primary current

Type

current rms

measuring range

I

PN (A)

I

PM (A)

± 50

± 150

HTB 50-P, HTB 50-TP1)

± 100

± 300

HTB 100-P, HTB 100-TP1)

± 150

± 450

HTB 150-P

± 200

± 500

HTB 200-P

± 300

± 600

HTB 300-P

± 400

± 600

HTB 400-P

V

C

Supply voltage (± 5 %) 2)

± 12 ..15

V

I

C

Current consumption

± 15

mA

V

d

Rms voltage for AC isolation test, 50 Hz, 1 min

2.5

kV

R

IS

Isolation resistance @ 500 VDC

> 500

MW

V

OUT

Output voltage (Analog)@ ±

I

PN, RL = 10kW, TA = 25°C

± 4

V

R

OUT

Output internal resistance

100

W

R

L

Load resistance

> 10

kW

Accuracy - Dynamic performance data

X

Accuracy @

I

PN, TA = 25°C (excluding offset)

< ± 1

% of

I

PN

e

L

Linearity error (0 .. ±

I

PN)

< ± 1

% of

I

PN

V

OE

Electrical offset voltage @

T

A = 25°C

< ± 30

mV

V

OH

Hysteresis offset voltage @

I

P = 0;

after an excursion of 1 x

I

PN

< ± 1

% of

I

PN

TCV

OE Temperature coefficient of VOE HTB 50-(T)P

< ± 2.0

mV/K

HTB 100-(T)P .. 400-P

< ± 1.0

mV/K

TCV

OUT Temperature coefficient of VOUT (% of reading)

< ± 0.1

%/K

t

r

Response time to 90% of

I

PN step

< 3

µs

BW

Frequency bandwidth (- 3 dB) 3)

DC .. 50

kHz

General data

T

A

Ambient operating temperature

- 40 .. + 80

°C

T

S

Ambient storage temperature

- 40 .. + 85

°C

m

Mass

< 30 ( < 36)

g

Standards

EN 50178 :

1997

2 pins of Ø2mm diameter are available on transducer

for PCB soldering

Notes : 1) -TP version is equipped with a primary bus bar.

2)

Operating at ±12V ≤ Vc < ±15V will reduce the measuring range.

3)

Derating is needed to avoid excessive core heating at high frequency.

同様の部品番号 - HTB150-P

メーカー	部品番号	データシート	部品情報
LEM	HTB150-P	551Kb / 3P	Current Transducer
LEM	HTB150-P	551Kb / 3P	Current Transducer HTB 50 .. 400 - P and HTB 50 .. 100 - TP

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同様の説明 - HTB150-P

メーカー	部品番号	データシート	部品情報
LEM	HTB50-P	66Kb / 2P	Current Transducers HTB 50~400-P and HTB 50~100-TP
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	HTB100-P	63Kb / 2P	Current Transducers HTB 50~400-P/SP5 and HTB 50~100-TP/SP5
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	HY50-P	130Kb / 2P	Current Transducer HY 50-P
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