EMH3 datasheet(1/2 Pages) SECOS

部品番号	EMH3

部品情報	Dual NPN Digital Transistors(Built-in Resistors)

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メーカー	SECOS [SeCoS Halbleitertechnologie GmbH]

ホームページ	http://www.secosgmbh.com

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1 / 2 page

Elektronische Bauelemente

EMH3

Dual NPN Digital Transistors

(Built-in Resistors)

28-Mar-2016 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Two DTC143T chips in a UMT package.

The elements of transistors are independent without

interference.

With this package, the mounting cost and space can

be cut into half.

EQUIVALENT CIRCUIT

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-563

3K

7 inch

ABSOLUTE MAXIMUM RATINGS (T

A=25°C)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V(BR)CBO

50

V

Collector-Emitter Voltage

V(BR)CEO

50

V

Emitter-Base Voltage

V(BR)EBO

5

V

Collector Current

IC

100

mA

Collector Power Dissipation

PC

150

mW

Junction and Storage Temperature

TJ, TSTG

150, -55~150

°C

ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T

A=25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Collector-Base Breakdown Voltage

V(BR)CBO

50

-

IC=50µA, IE=0

Collector-Emitter Breakdown Voltage

V(BR)CEO

50

-

V

IC=1mA, IB=0

Emitter-Base Breakdown Voltage

V(BR)EBO

5

-

V

IE=50µA, IC=0

Collector Cut-Off Current

ICBO

-

500

nA

VCB=50V, IE=0

Emitter Cut-Off Current

IEBO

-

500

nA

VEB=4V, IC=0

Collector-Emitter Saturation Voltage

VCE(sat)

-

0.3

V

IC=5mA, IB=0.25mA

DC Current Transfer Ration

hFE

100

-

600

VCE=5V, IC=1mA

Input Resistance

R1

3.29

4.7

6.11

K

Transition Frequency

fT

-

250

-

MHz

VCE=10V, IE= -5mA, f=100MHz

SOT-563

H3

E

F

J

B

C

D

G

A

H

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

1.50

1.70

F

0.09

0.16

B

1.50

1.70

G

0.45

0.55

C

0.525

0.60

H

0.17

0.27

D

1.10

1.30

J

0.10

0.30

E

-

0.05

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