 |
データシートサーチシステム |
|
|
データシートサーチシステム |
|
AT847HT データシート(PDF) 1 Page - Power Semiconductors |
|
|
|||||||||||||||||||||||||||||
AT847HT データシート(HTML) 1 Page - Power Semiconductors |
|
|
1 / 4 page  PHASE CONTROL THYRISTOR AT847HT Repetitive voltage up to 2800 V Mean forward current 2979 A Surge current 39,2 kA FINAL SPECIFICATION Feb. 17 - Issue: 4 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 2800 V V RSM Non-repetitive peak reverse voltage 125 2900 V V DRM Repetitive peak off-state voltage 125 2800 V I RRM Repetitive peak reverse current V=VRRM 125 200 mA I DRM Repetitive peak off-state current V=VDRM 125 200 mA CONDUCTING I T (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 2979 A I T (AV) Mean forward current 180° sin ,50 Hz, Tc=85°C, double side cooled 2372 A I TSM Surge forward current Sine wave, 10 ms 125 39,2 kA I² t I² t without reverse voltage 7683 x 10 3 A²s V T On-state voltage On-state current = 2100 A 25 1,22 V V T(TO) Threshold voltage 125 0,85 V r T On-state slope resistance 125 0,175 mohm SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM ; gate 10V, 5 W 125 800 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 125 1000 V/µs t d Gate controlled delay time, typical VD=100V; gate source 10V, 10 W , tr=.5 µs 25 2 µs t q Circuit commutated turn-off time, typical dv/dt = 20 V/µs linear up to 75% VDRM 400 µs Q rr Reverse recovery charge di/dt = -20 A/µs, I= 2150 A 125 µC I rr Peak reverse recovery current VR= 50 V A I H Holding current, typical VD=5V, gate open circuit 25 500 mA I L Latching current, typical VD=12V, tp=30µs 25 1000 mA GATE V GT Gate trigger voltage VD=12V 25 3,50 V I GT Gate trigger current VD=12V 25 400 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,25 V V FGM Peak gate voltage (forward) 30 V I FGM Peak gate current 10 A V RGM Peak gate voltage (reverse) 10 V P GM Peak gate power dissipation Pulse width 100 µs 150 W P G Average gate power dissipation 10 W MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 11 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 2 °C/kW T j Operating junction temperature -30 / 125 °C F Mounting force 40.0 / 50.0 kN Mass 1500 g ORDERING INFORMATION : AT847HT S 28 standard specification VRRM/100 POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - sales@poseico.com |
同様の部品番号 - AT847HT |
|
同様の説明 - AT847HT |
|
|
|
リンク URL |
| ALLDATASHEETはお客様のビジネスに役立ちますか？ [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Japanese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
