STUD606S datasheet(2/8 Pages) SAMHOP

部品番号	STUD606S

部品情報	N-Channel Logic Level Enhancement Mode Field Effect Transistor

PDF	8 Pages

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メーカー	SAMHOP [SamHop Microelectronics Corp.]

ホームページ	http://www.samhop.com.tw

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2 / 8 page

Symbol

Min

Typ

Max

Units

BVDSS

60

V

1

IGSS

±100

nA

VGS(th)

1.0

V

45

gFS

16

S

CISS

825

pF

COSS

72

pF

CRSS

48

pF

Qg

13

nC

12.5

38

6

tD(ON)

13.5

ns

tr

ns

tD(OFF)

ns

tf

ns

VDS=30V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=30V

ID=1A

VGS=10V

RGEN=3.3 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=10.5A

VDS=20V , ID=10.5A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

IDSS

uA

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=48V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=4.5V , ID=9.5A

56

50

68

m ohm

f=1.0MHz

STU/D606S

Ver 1.2

www.samhop.com.tw

Dec,03,2012

2

1.8

3.0

VSD

nC

Qgs

nC

Qgd

1.6

3.4

Gate-Drain Charge

Gate-Source Charge

Diode Forward Voltage

VDS=30V,ID=10.5A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=1.7A

0.79

1.3

V

nC

6.3

VDS=30V,ID=10.5A,VGS=10V

VDS=30V,ID=10.5A,VGS=4.5V

Notes

a.Drain current limited by maximum junction temperature.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)

_

c

同様の部品番号 - STUD606S

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