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2N3585 データシート(PDF) 2 Page - Microsemi Corporation

部品番号 2N3585
部品情報  NPN HIGH POWER SILICON TRANSISTOR
PDF  2 Pages
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メーカー  MICROSEMI [Microsemi Corporation]
ホームページ  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N3585 データシート(HTML) 2 Page - Microsemi Corporation

  2N3585 Datasheet HTML 1Page - Microsemi Corporation 2N3585 Datasheet HTML 2Page - Microsemi Corporation  
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ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc
IC = 100 mAdc, VCE = 10 Vdc
hFE
25
40
100
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.125 Adc
VCE(sat)
0.75
Vdc
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
VBE(sat)
1.4
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 200 mAdc, VCE = 10 Vdc, f = 5.0 MHz
h
fe
3.0
15
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz
hfe
25
200
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
120
pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 1.0 Adc; IB = 100 mAdc; RC = 29 Ω
ton
3.0
µs
Turn-Off Time
VCC = 30 Vdc; IC = 1.0 Adc; IB = -IB = 100 mAdc; RC = 29 Ω
toff
7.0
µs
SAFE OPERATING AREA
DC Tests
TC = +25
0C, 1 Cycle, t = 1.0 s
Test 1
VCE = 17.5 Vdc, IC = 2.0 Adc
Test 2
VCE = 100 Vdc, IC = 350 mAdc
Test 3
VCE = 250 Vdc, IC = 37 mAdc
2N3584
VCE = 300 Vdc, IC = 17 mAdc
2N3585
(3) Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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