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PKL3101 データシート(PDF) 2 Page - PACELEADER INDUSTRIAL

部品番号 PKL3101
部品情報  P-Ch 30V Fast Switching MOSFETs
PDF  5 Pages
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メーカー  PACELEADER [PACELEADER INDUSTRIAL]
ホームページ  http://www.paceleader.tw
Logo PACELEADER - PACELEADER INDUSTRIAL

PKL3101 データシート(HTML) 2 Page - PACELEADER INDUSTRIAL

  PKL3101 Datasheet HTML 1Page - PACELEADER INDUSTRIAL PKL3101 Datasheet HTML 2Page - PACELEADER INDUSTRIAL PKL3101 Datasheet HTML 3Page - PACELEADER INDUSTRIAL PKL3101 Datasheet HTML 4Page - PACELEADER INDUSTRIAL PKL3101 Datasheet HTML 5Page - PACELEADER INDUSTRIAL  
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P-Ch 30V Fast Switching MOSFETs
2
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-30
---
---
V
△BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.023
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V , ID=-4A
---
42
52
m
VGS=-4.5V , ID=-3A
---
75
90
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-1.2
-1.6
-2.5
V
△VGS(th)
VGS(th) Temperature Coefficient
---
4
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-24V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-24V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-4A
---
11
---
S
Qg
Total Gate Charge (-4.5V)
VDS=-15V , VGS=-4.5V , ID=-4A
---
6.4
9.0
nC
Qgs
Gate-Source Charge
---
2.3
3.2
Qgd
Gate-Drain Charge
---
1.9
2.7
Td(on)
Turn-On Delay Time
VDD=-15V , VGS=-10V , RG=3.3
,
ID=-4A
---
2.8
5.6
ns
Tr
Rise Time
---
8.4
15.1
Td(off)
Turn-Off Delay Time
---
39
78.0
Tf
Fall Time
---
6
12.0
Ciss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
583
816
pF
Coss
Output Capacitance
---
100
140
Crss
Reverse Transfer Capacitance
---
80
112
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current1,4
VG=VD=0V , Force Current
---
---
-4.5
A
ISM
Pulsed Source Current2,4
---
---
-23
A
VSD
Diode Forward Voltage2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
trr
Reverse Recovery Time
IF=-4A , dI/dt=100A/µs , TJ=25℃
---
7.8
---
nS
Qrr
Reverse Recovery Charge
---
2.5
---
nC
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
PKL3101
2
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