2CL72 datasheet(1/2 Pages) GETEDZ

部品番号	2CL72

部品情報	High Voltage Silicon Rectifier Diode

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メーカー	GETEDZ [GETAI ELECTRONICS DEVICE CO., LTD]

ホームページ	http://www.hvgtsemi.com

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2CL72

5.0mA 10kV 100nS--High Voltage Silicon Rectifier Diode

GETE ELECTRONIC CO.,LTD

Http://www.getedz.com

Http://www.hvgtsemi.com E-mai: sales@getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628

FAX:0086-20-8184 9638

2017-08 1 / 2

INTRODUCE:

HVGT high voltage silicon rectifier diodes is

made of high quality glass passivated chip and

high reliability epoxy resin sealing structure,

and through professional testing equipment

inspection qualified after to customers.

FEATURES:

1. High reliability design.

2. High voltage design.

3. High frequency .

4. Conform to RoHS.

5. Epoxy resin molded in vacuumHave

anticorrosion in the surface.

APPLICATIONS:

1. High voltage multiplier circuit

2. Electrostatic generator circuit .

3. General purpose high voltage rectifier.

4. Other.

MECHANICAL DATA:

1. Case: epoxy resin molding.

2. Terminal: welding axis.

3. Net weight: 0.30 grams (approx).

SHAPE DISPLAY:

SIZE: (Unit:mm)

HVGT NAME: DO-310

MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value Units

Repetitive Peak Renerse Voltage

VRRM

TA=25°C

10

kV

Average Forward Current Maximum

IFAVM

TA=25°C

5.0

mA

TOIL=--°C

--

mA

Suege Current

IFSM

TA=25°C; Half-Sine Wave; 8.3mS

0.5

A

Junction Temperature

TJ

-40~+125

°C

Allowable Operation Case Temperature

Tc

125

°C

Storage Temperature

TSTG

-40~+125

°C

ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified)

Items

Symbols

Condition

Data value Units

Maximum Forward Voltage Drop

VF

at 25°C; at IF(AV)

30

V

Maximum Reverse Current

IR1

at 25°C; at VRRM

2.0

uA

IR2

at 100°C; at VRRM

5.0

uA

Maximum Reverse Recovery Time

TRR

at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR

100

nS

Junction Capacitance

CJ

at 25°C; VR=0V; f=1MHz

1.0

pF

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