DMN1008UFDF

2 of 7

www.diodes.com

October 2017

© Diodes Incorporated

DMN1008UFDF

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

12

V

Gate-Source Voltage

±8

V

Steady

State

12.2

9.8

A

Pulsed Drain Current (380

μs Pulse, Duty Cycle = 1%)

60

A

Continuous Source-Drain Diode Current (Note 6)

1.8

A

Avalanche Current, L = 0.1mH (Note 7)

16.4

A

Avalanche Energy, L = 0.1mH (Note 7)

13.5

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

0.7

W

0.4

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

168

°C/W

Total Power Dissipation (Note 6)

1.7

W

1.0

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

74

°C/W

Thermal Resistance, Junction to Case (Note 6)

12

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

12

—

—

V

—

—

1

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

0.3

—

1.0

V

Static Drain-Source On-Resistance

—

6.6

8

m

Ω

7.6

11

8.5

12.5

Diode Forward Voltage

—

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

—

995

—

pF

f = 1.0MHz

Output Capacitance

—

305

—

Reverse Transfer Capacitance

—

270

—

Gate Resistance

—

1.5

—

Ω

—

13.6

—

nC

—

23.4

—

Gate-Source Charge

—

1.3

—

Gate-Drain Charge

—

3.3

—

Turn-On Delay Time

—

3.5

—

ns

Turn-On Rise Time

—

6.6

—

Turn-Off Delay Time

—

17.5

—

Turn-Off Fall Time

—

7.5

—

Reverse Recovery Time

—

15

—

ns

Reverse Recovery Charge

—

4

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.