| メーカー | 部品番号 | データシート | 部品情報 |
Infineon Technologies A... |
IHW20N65R5
|
1Mb/15P
|
very tight parameter distribution
Rev.2.2,2014-11-27
|
|
IHW30N65R5
|
1Mb/15P
|
Reverse conducting IGBT with monolithic body diode
Rev.1.1,2015-06-01
|
|
IHW30N65R5
|
2Mb/15P
|
Reverse conducting IGBT with monolithic body diode
Rev.2.1,2015-12-22
|
|
IHW40N65R5
|
1Mb/15P
|
high ruggedness and stable temperature behavior
Rev.2.2,2014-11-27
|
|
IHW40N65R5
|
2Mb/15P
|
Reverse conducting IGBT with monolithic body diode
Rev.2.3,2015-12-22
|
Inchange Semiconductor ... |
IHW40N65R5
|
614Kb/4P
|
Trench Field-Stop IGBT
|
Infineon Technologies A... |
IHW50N65R5
|
1Mb/15P
|
Qualified according to JESD-022 for target applications
Rev.2.3,2014-12-16
|
| Search Partnumber :
Start with "65R5" -
Total : 13 ( 1/1 Page) |
Wuxi Unigroup Microelec... |
65R075DFD
|
753Kb/10P |
650V Super-junction Power MOSFET
V1.0 |
Infineon Technologies A... |
65R080CFD
|
1Mb/12P |
650V CoolMOS CFD Power Transistor
Rev. 2.0, 2011-02-02 |
Pentair Equipment Prote... |
65R1
|
4Mb/38P |
Non-Insulated Ring Terminals
|
Shenzhen MSemitek Semic... |
65R170E
|
997Kb/9P |
650V N-Channel MOSFET
Rev. 1.2 Jun . 2021 |
Wuxi Unigroup Microelec... |
65R175M
|
597Kb/8P |
650V Super-junction Power MOSFET
V1.0 |
|
65R180CFD
|
491Kb/8P |
650V Super-Junction Power MOSFET
V1.0 |
KIA Semiconductor Techn... |
65R190
|
450Kb/6P |
20A竊?50V N-CHANNEL MOSFET
|
|
65R300
|
380Kb/6P |
15A竊?50V N-CHANNEL MOSFET
|
Wuxi Unigroup Microelec... |
65R365M
|
614Kb/8P |
650V Super-junction Power MOSFET
V1.0 |
|
65R380D
|
706Kb/11P |
650V Super-junction Power MOSFET
V1.0 |
|
65R400MFD
|
608Kb/8P |
650V Super-junction Power MOSFET
V1.0 |
KIA Semiconductor Techn... |
65R420
|
461Kb/6P |
11A竊?50V N-CHANNEL MOSFET
|
|
65R950
|
558Kb/6P |
5A竊?50V N-CHANNEL MOSFET
|
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