| メーカー | 部品番号 | データシート | 部品情報 |
Jiangsu Changjiang Elec... |
CJU50N03
|
3Mb/5P
|
N-Channel Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
CJU50N03
|
1Mb/4P
|
N-Channel MOSFET uses advanced trench technology
|
| Search Partnumber :
Start with "CJU50N03" -
Total : 49 ( 1/3 Page) |
Jiangsu Changjiang Elec... |
CJU50N06
|
903Kb/5P |
N-Channel Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
CJU50N06
|
1,014Kb/4P |
N-Channel MOSFET uses advanced trench technology
|
Jiangsu Changjiang Elec... |
CJU55P30
|
1Mb/5P |
P-Channel Power MOSFET
|
ZP Semiconductor |
CJU01N60
|
451Kb/2P |
Plastic-Encapsulate MOSFETS
|
SHENZHEN DOINGTER SEMIC... |
CJU01N60
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
ZP Semiconductor |
CJU01N65B
|
695Kb/3P |
Plastic-Encapsulate MOSFETS
|
|
CJU01N80
|
546Kb/2P |
Plastic-Encapsulate MOSFETS
|
Jiangsu Changjiang Elec... |
CJU01N80
|
796Kb/5P |
N-Channel Power MOSFET
|
ZP Semiconductor |
CJU02N60
|
938Kb/3P |
Plastic-Encapsulate MOSFETS
|
SHENZHEN DOINGTER SEMIC... |
CJU02N60
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
ZP Semiconductor |
CJU02N65
|
706Kb/3P |
Plastic-Encapsulate MOSFETS
|
|
CJU02N80
|
691Kb/3P |
Plastic-Encapsulate MOSFETS
|
SHENZHEN DOINGTER SEMIC... |
CJU02N80
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
List of Unclassifed Man... |
CJU03N25
|
762Kb/4P |
POWER FIELD EFFECT TRANSISTOR
|
ZP Semiconductor |
CJU03N80
|
379Kb/2P |
Plastic-Encapsulate MOSFETS
|
|
CJU04N60
|
865Kb/3P |
Plastic-Encapsulate MOSFETS
|
|
CJU04N60A
|
568Kb/2P |
Plastic-Encapsulate MOSFETS
|
Jiangsu Changjiang Elec... |
CJU04N60A
|
1Mb/5P |
N-Channel Power MOSFET
|
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