| メーカー | 部品番号 | データシート | 部品情報 |
International Rectifier |
IRG4BC20F
|
161Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
|
|
IRG4BC20F
|
98Kb/35P |
Fit Rate / Equivalent Device Hours
|
|
IRG4BC20FD
|
222Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
|
|
IRG4BC20FD
|
98Kb/35P |
Fit Rate / Equivalent Device Hours
|
|
IRG4BC20FD-S
|
222Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
|
|
IRG4BC20FD-SPBF
|
298Kb/12P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT
|
|
IRG4BC20FD-STRL
|
222Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
|
|
IRG4BC20FDPBF
|
318Kb/11P |
INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE
|
|
IRG4BC20FDPBF
|
319Kb/11P |
OPTIMIZED FOR MEDIUM OPERATING
|
|
IRG4BC20FDPBF
|
319Kb/11P |
OPTIMIZED FOR MEDIUM OPERATING
|
|
IRG4BC20FPBF
|
204Kb/9P |
INSULATED GATE BIPOLAR TRANSISTOR
|
|
IRG4BC20FPBF
|
204Kb/9P |
INSULATED GATE BIPOLAR TRANSISTOR
|
|
IRG4BC20FPBF
|
204Kb/9P |
INSULATED GATE BIPOLAR TRANSISTOR
|
Japanese ▼ 
English
Chinese
German
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand