| メーカー | 部品番号 | データシート | 部品情報 |
International Rectifier |
IRG4BC30W-S
|
188Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)
|
|
IRG4BC30W-SPBF
|
275Kb/9P |
INSULATED GATE BIPOLAR TRANSISTOR
|
|
IRG4BC30W-SPBF
|
585Kb/9P |
INSULATED GATE BIPOLAR TRANSISTOR
|
|
IRG4BC30W-SPBF
|
275Kb/9P |
INSULATED GATE BIPOLAR TRANSISTOR
|
|
IRG4BC30WPBF
|
287Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR
|
|
IRG4BC30WPBF
|
582Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
|
IRG4BC30WPBF
|
287Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR
|
|
IRG4BC30W
|
582Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
|
IRG4BC30F
|
167Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
|
|
IRG4BC30F
|
177Kb/9P |
INSULATED GATE BIPOLAR TRANSISTOR
|
|
IRG4BC30F
|
98Kb/35P |
Fit Rate / Equivalent Device Hours
|
|
IRG4BC30F-STRLP
|
177Kb/9P |
INSULATED GATE BIPOLAR TRANSISTOR
|
Inchange Semiconductor ... |
IRG4BC30FD
|
387Kb/2P |
IGBT
|
International Rectifier |
IRG4BC30FD
|
98Kb/35P |
Fit Rate / Equivalent Device Hours
|
|
IRG4BC30FD
|
412Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
|
|
IRG4BC30FD-S
|
1Mb/11P |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
|
IRG4BC30FD-SPBF
|
1Mb/11P |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
|
IRG4BC30FD-SPBF
|
1Mb/12P |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
|
IRG4BC30FD-SPBF
|
1Mb/11P |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
|
IRG4BC30FD1
|
361Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
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