| メーカー | 部品番号 | データシート | 部品情報 |
 TEKTRONIX, INC. |
RM2000B
|
930Kb/10P |
Digital Storage Oscilloscopes
|
|
RM2000B
|
1Mb/8P |
Digital Storage Oscilloscopes
16 Mar 2012 |
 Micro Commercial Compon... |
RM2000E
|
71Kb/3P |
500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts
|
|
RM2000E
|
244Kb/3P |
500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts
|
|
RM2000E
|
244Kb/3P |
500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts
|
|
RM2000E
|
265Kb/3P |
500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts
|
|
RM2000E-TP
|
244Kb/3P |
500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts
|
 Rectron Semiconductor |
RM2003
|
437Kb/11P |
N and P-Channel Enhancement Mode Power MOSFET
201 02/15 REV: 9- B |
|
RM2004NE
|
331Kb/7P |
N-Channel Enhancement Mode Power MOSFET
|
 Winchester Electronics ... |
RM200B-17W2S-1
|
134Kb/1P |
17W2S D-SUB CONNECTOR
|
|
RM200C-21WA4S-0
|
127Kb/1P |
21WA4S GUIDE PIN PLATE ASSEMBLY
|
|
RM200C-9
|
62Kb/1P |
FLOAT PLATE ASSEMBLY
|
 Mitsubishi Electric Sem... |
RM200DA-20F
|
50Kb/3P |
HIGH SPEED SWITCHING USE INSULATED TYPE
|
|
RM200DA-24F
|
50Kb/3P |
HIGH SPEED SWITCHING USE INSULATED TYPE
|
|
RM200DG-130S
|
79Kb/4P |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
|
RM200HA-20F
|
47Kb/3P |
HIGH SPEED SWITCHING USE INSULATED TYPE
|
|
RM200HA-24F
|
47Kb/3P |
HIGH SPEED SWITCHING USE INSULATED TYPE
|
 Rectron Semiconductor |
RM200N120HD
|
789Kb/8P |
120V N-Ch Power MOSFET
|
|
RM200N120T2
|
789Kb/8P |
120V N-Ch Power MOSFET
|
|
RM200N120T7
|
789Kb/8P |
120V N-Ch Power MOSFET
|