| メーカー | 部品番号 | データシート | 部品情報 |
 VBsemi Electronics Co.,... |
VB3420
|
729Kb/9P |
Dual N-Channel 40 V (D-S) MOSFET
|
 Pepperl+Fuchs Inc. |
VB34-2500
|
1Mb/5P |
Barcode scanner
|
|
VB34-2500-OM
|
1Mb/5P |
Barcode scanner
|
|
VB34-2500-OM-P
|
1Mb/5P |
Barcode scanner
|
|
VB34-2500-P
|
1Mb/5P |
Barcode scanner
|
 VBsemi Electronics Co.,... |
VB3407A
|
771Kb/9P |
P-Channel 30 V (D-S) MOSFET
|
 France Joint |
VB34X40X5
|
384Kb/5P |
STANDARD SHAFT SEALS
|
|
VB34X41X4
|
384Kb/5P |
STANDARD SHAFT SEALS
|
|
VB34X44X5
|
384Kb/5P |
STANDARD SHAFT SEALS
|
 New Jersey Semi-Conduct... |
VB30
|
102Kb/1P |
These rectifiers offer high voltage ranges in minimum-sized
|
 Extech Instruments Corp... |
VB300
|
140Kb/1P |
3-Axis G-Force Datalogger
|
 Vishay Siliconix |
VB30100C
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
19-May-08 |
|
VB30100C
|
165Kb/6P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB30100C
|
102Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
20-Jun-2018 |
 Inchange Semiconductor ... |
VB30100C
|
399Kb/3P |
Schottky Barrier Rectifier
|
 Vishay Siliconix |
VB30100C-E3
|
152Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
11-Sep-13 |
|
VB30100C-E3
|
178Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
13-Dec-16 |
|
VB30100C-E3
|
214Kb/6P |
Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.455 V at IF = 5 A
15-Oct-2019 |
 Inchange Semiconductor ... |
VB30100C-E3
|
315Kb/2P |
Schotty Barrier Diode
|
 Vishay Siliconix |
VB30100C-E3/4W
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
19-May-08 |