# KSMP4441

## Description
This P-channel MOSFET utilizes advanced trench technology for low gate charge and excellent RDS(on).

Features
️· Low gate charge
️· Green device available
️· Advanced high-density trench technology for low RDS(on)
️· Excellent package for heat dissipation

## Absolute Maximum Ratings (TC = 25°C)

Symbol	Parameter	Rating	Unit
VDS	Drain-Source Voltage	-60	V
VGS	Gate-Source Voltage	±20	V
ID (Continuous, T = 25°C)	Drain Current	-4	A
ID (Continuous, T = 100°C)	Drain Current	-3.1	A
ID (Pulsed)	Drain Current	-20	A
EAS	Single Pulse Avalanche Energy	–	mJ
PD	Power Dissipation	3.1	W
TJ, TSTG	Operating/Storage Junction Temperature	-55 to 150	°C

## Thermal Characteristics

Parameter	Rating	Unit
RƟJC	Junction-to-Case Thermal Resistance	40	°C/W
RƟJA	Junction-to-Ambient Thermal Resistance	30	°C/W

## Electrical Characteristics (TC = 25°C)
️· BVDSS: -60V
️· IDSS: -1μA
️· VGS(th): -1 to -3V
️· RDS(ON): 80-100 mΩ (VDS=10V, ID=6A)
️· Qg (Total Gate Charge): 16-20 nC
️· VSD (Forward Voltage): -0.77 to -1V

## Package and Ordering Information

Part No.	Marking	Package
KSMP4441	KSMP4441	SOP-8

## Notes
️· Data tested on a 1 inch² FR-4 board with 2oz copper.
️· Data tested with pulse width ≤300us, duty cycle ≤2%