KSMP4441 datasheet(2/4 Pages) KERSEMI

2 / 4 page

KSMP4441

KERSMI ELECTRONIC CO.,LTD.

-60V P-channel MOSFET

www.kersemi.com

Package Marking and Ordering Information

Part NO.

Marking

Package

KSMP4441

SOP-8

Electrical Characteristics TC=25℃ unless otherwise noted

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain-Sourtce Breakdown Voltage

VDS=0V,ID=250μA

-60

—

IDSS

Zero Gate Voltage Drain Current

VDS=0V, VDS=32V

—

-1

μA

IGSS

Gate-Source Leakage Current

VDS=±20V, VDS=0A

—

±100

On Characteristics

VGS(th)

GATE-Source Threshold Voltage

VDS=VDS, ID=250μA

-1

-2.1

-3

RDS(ON)

Drain-Source On Resistance²

VDS=10V,ID=6A

—

100

MΩ

VDS=2.5V,ID=5A

—

130

—

GFS

Forward Transconductance

VDS=5V,ID=12A

—

Dynamic Characteristics

Ciss

Input Capacitance

VDS=15V,VGS=0V,

f=1MHz

—

930

1120

Coss

Output Capacitance

—

Crss

Reverse Transfer Capacitance

—

Switching Characteristics

td(on)

Turn-On Delay Time

VDS=20V,

VGS=10V,RGEN=3.3Ω

—

Rise Time

—

3.8

—

td(off)

Turn-Off Delay Time

—

31.5

—

Fall Time

—

7.5

—

Total Gate Charge

VGS=4.5V, VDS=20V,

ID=6A

—

Qgs

Gate-SourceCharge

—

Qgd

Gate-Drain “Miller” Charge

—

2.5

—

Drain-Source Diode Characteristics

VSD

Source-Drain Diode ForwardVoltage²

VGS=0V,IS =1A

—

-0.77

-1

trr

Reverse Recovery Time

IF=7A,di/dt=100A/μS

—

Qrr

Reverse Recovery Charge

—

Symbol

Parameter

Ratings

Units

RƟJC

Thermal Resistance ,Junction to Case1

℃/W

RƟJA

Thermal Resistance, Junction to Ambient1

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