PTAC210802FC データシート(PDF) - Cree, Inc

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PTAC210802FC データシート (PDF) - Cree, Inc

PTAC210802FC Datasheet PDF - Cree, Inc


部品番号	PTAC210802FC

ダウンロード	PTAC210802FC ダウンロード

ファイルサイズ	719.51 Kbytes

ページ	9 Pages

メーカー	CREE [Cree, Inc]

ホームページ	http://www.cree.com/

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部品情報	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 1805 ??2170 MHz

PTAC210802FC Datasheet (PDF)

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PTAC210802FC Datasheet PDF - Cree, Inc


部品番号	PTAC210802FC

ダウンロード	PTAC210802FC Click to download

ファイルサイズ	719.51 Kbytes

ページ	9 Pages

メーカー	CREE [Cree, Inc]

ホームページ	http://www.cree.com/

Logo

部品情報	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 1805 ??2170 MHz

PTAC210802FC データシート (HTML) - Cree, Inc

PTAC210802FC Datasheet HTML 1Page - Cree, Inc

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PTAC210802FC Datasheet HTML 8Page - Cree, Inc

PTAC210802FC Datasheet HTML 9Page - Cree, Inc

同様の部品番号 - PTAC210802FC

メーカー	部品番号	データシート	部品情報
Infineon Technologies A...	PTAC210802FC	316Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET Rev. 04, 2014-05-14
	PTAC210802FC	650Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz Rev. 05.2, 2016-06-17
	PTAC210802FCV1R0	650Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz Rev. 05.2, 2016-06-17
	PTAC210802FCV1R0XTMA1	650Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz Rev. 05.2, 2016-06-17
	PTAC210802FCV1R250	650Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz Rev. 05.2, 2016-06-17

同様の説明 - PTAC210802FC

メーカー	部品番号	データシート	部品情報
Infineon Technologies A...	PXAC182002FC	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz Rev. 02.3, 2016-06-17
	PTAC210802FC	650Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz Rev. 05.2, 2016-06-17
	PXAC200902FC	489Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz Rev. 02.1, 2016-02-11
	PXAC210552FC	206Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 02, 2015-12-04
	PXAC210552MD	466Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 03.1, 2017-01-25
	PXAC210552ND	466Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 04.1, 2017-01-09
Cree, Inc	PXAC210552FC	600Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz
	PTFB210801FA	636Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz
	PXAC200902FC	600Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 - 2170 MHz
WOLFSPEED, INC.	PXAC210552FC	702Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28

Cree, Inc について

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*この情報はあくまでも一般的な情報であり、上記の情報によって生じたいかなる損失や損害についても責任を負うものではありません。

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