■ Features
● Low drain-source ON-resistance:
   P Channel RDS(ON) = 38m¡ (typ.)(VGS=-10V)
   N Channel RDS(ON) = 38mȍ(typ.)(VGS=10V)
● High forward transfer admittance:
   P Channel |Yfs| = 7.3S (typ.)
   N Channel |Yfs| = 8S (typ.)
● Low leakage current:
   P Channel IDSS = -10ȝA(max)(VDS=-30V)
   N Channel IDSS = 10ȝA(max)(VDS=30V)
● Enhancement mode:
   P Channel Vth = -0.8 to -2.0 V (VDS = -10V, ID = -1mA)
   N Channel Vth = 1.3 to 2.5 V (VDS = 10V, ID = 1mA)