TPCP8404 datasheet(4/10 Pages) KEXIN

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Transistors

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MOSFET

SMD Type

Silicon P,N Channel MOSFET

TPCP8404

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS =±20 V, VDS = 0 V

±100

Drain cut-off current

IDSS

VDS = 30 V, VGS = 0 V

V (BR) DSS

ID = 10 mA, VGS = 0 V

Drain-source breakdown

voltage

V (BR) DSX

ID = 10 mA, VGS = 20 V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.3

2.5

VGS = 4.5 V, ID = 2 A

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 2 A

Forward transfer admittance

|Yfs|VDS = 10 V, ID = 2 A

Input capacitance

Ciss

190

Reverse transfer capacitance

Crss

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

Rise time

4.5

Turn-on time

ton

9.0

Fall time

3.0

Switching time

Turn-off time

toff

Duty

1%, tw = 10 s

Total gate charge

(gate-source plus gate-drain)

4.6

Gate-source charge 1

Qgs1

0.7

Gate-drain (“miller”) charge

Qgd

VDD

24 V, VGS = 10 V, ID = 4 A

1.4

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP

Forward voltage (diode)

VDSF

IDR = 4 A, VGS = 0 V

1.2

VDD 15 V

0 V

VGS

10 V

ID = 2 A

VOUT

Electrical Characteristics Ta = 25

(N-ch)

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