General description
240 W LDMOS power transistor with enhanced video bandwidth for base station
applications at frequencies from 2110 MHz to 2200 MHz.
Features and benefits
 Excellent ruggedness
 Excellent video bandwidth enabling full band operation
 High efficiency
 Low thermal resistance providing excellent thermal stability
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Applications
 RF power amplifiers for base stations and multi carrier applications in the
2110 MHz to 2200 MHz frequency range