BLC10G22LS-240PVT datasheet(1/17 Pages) AMPLEON

部品番号	BLC10G22LS-240PVT

部品情報	Power LDMOS transistor

PDF	17 Pages

Scroll/Zoom	100%

メーカー	AMPLEON [Ampleon Netherlands B.V.]

ホームページ	https://www.ampleon.com

Logo

1 / 17 page

1. Product profile

1.1 General description

240 W LDMOS power transistor with enhanced video bandwidth for base station

applications at frequencies from 2110 MHz to 2200 MHz.

[1]

Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;

5 MHz carrier spacing.

1.2 Features and benefits



Excellent ruggedness



Excellent video bandwidth enabling full band operation



High efficiency



Low thermal resistance providing excellent thermal stability



Designed for low memory effects providing excellent pre-distortability



Internally matched for ease of use



Integrated ESD protection



Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications



RF power amplifiers for base stations and multi carrier applications in the

2110 MHz to 2200 MHz frequency range

BLC10G22LS-240PVT

Power LDMOS transistor

Rev. 2 — 24 May 2017

Product data sheet

Table 1.

Typical performance

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Test signal

f

IDq

VDS

PL(AV)

Gp

D

ACPR5M

(MHz)

(mA)

(V)

(W)

(dB)

(%)

(dBc)

2-carrier W-CDMA

2110 to 2170

1600

28

60

19.7

30

30 [1]

同様の部品番号 - BLC10G22LS-240PVT

メーカー	部品番号	データシート	部品情報
Ampleon Netherlands B.V...	BLC10G22XS-301AVT	1Mb / 14P	Power LDMOS transistor Rev. 1 ??30 April 2020
	BLC10G22XS-400AVT	1Mb / 16P	Power LDMOS transistor Rev. 1 ??30 April 2018
	BLC10G22XS-401AVT	1Mb / 14P	Power LDMOS transistor Rev. 1 - 20 May 2022
	BLC10G22XS-551AVT	1Mb / 15P	Power LDMOS transistor Rev. 2 ??7 November 2019
	BLC10G22XS-570AVT	1Mb / 15P	Power LDMOS transistor Rev. 1 ??10 June 2021

More results

同様の説明 - BLC10G22LS-240PVT

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	BLF6G20-110	74Kb / 9P	Power LDMOS transistor Rev. 01-28 January 2008
	BLF6G20-45	88Kb / 12P	Power LDMOS transistor Rev. 02-25 August 2008
	BLF6G20-110	90Kb / 10P	Power LDMOS transistor Rev. 03-13 January 2009
	BLF7G22L-130	180Kb / 15P	Power LDMOS transistor Rev. 3-18 November 2010
	BLF2425M7L140	299Kb / 11P	Power LDMOS transistor Rev. 3-6 September 2012
	BLF188XR	227Kb / 15P	Power LDMOS transistor Rev. 5-12 November 2013
	BLA8G1011L(S)-300	200Kb / 14P	Power LDMOS transistor Rev. 2-26 January 2015
	BLC8G22LS-450AV	225Kb / 15P	Power LDMOS transistor Rev. 3-2 June 2015
	BLF6G10-200RN	169Kb / 11P	Power LDMOS transistor Rev. 02-21 January 2010
	BLF6G13L-250P	159Kb / 14P	Power LDMOS transistor Rev. 3-14 October 2011