Features
• 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K × 8
- Virtually unlimited endurance of 1000 trillion (1015) read/write
- 151-year data retention (see “Data retention and endurance” on page 24)
- Infineon instant non-volatile write technology
- Advanced high-reliability ferroelectric process
• Fast serial peripheral interface (SPI)
- Up to 40 MHz frequency
- Supports SPI Mode 0 (0, 0) and Mode 3 (1, 1)
• Sophisticated write protection scheme
- Hardware protection using the Write Protect (WP) pin
- Software protection using Write Disable (WRDI) instruction
- Software block protection for 1/4, 1/2, or entire array
• Device ID and Serial number
- Manufacturer ID and Product ID
- Unique Device ID
- Serial number
• Dedicated 256-byte special sector F-RAM
- Dedicated special sector write and read
- Stored content can survive up to three standard reflow soldering cycles
• Low-power consumption
- 2.7 mA (typ) active current at 40 MHz
- 14 μA (typ) standby current
- 1.10 μA (typ) deep power-down mode current
- 0.1 μA (typ) hibernate mode current
• Low-voltage operation
- : VDD = 1.71 V to 1.89 V
- CY15B116QN: VDD = 1.8 V to 3.6 V
• Industrial operating temperature: 40°C to +85°C
• Packages
- 24-ball fine pitch ball grid- array (24-ball FBGA)
• Restriction of hazardous substances (RoHS) compliant