2SC5336 データシート(PDF) - California Eastern Labs

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2SC5336 データシート (PDF) - California Eastern Labs

2SC5336 Datasheet PDF - California Eastern Labs


部品番号	2SC5336

ダウンロード	2SC5336 ダウンロード

ファイルサイズ	1035.34 Kbytes

ページ	7 Pages

メーカー	CEL [California Eastern Labs]

ホームページ	http://www.cel.com

Logo

部品情報	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

2SC5336 Datasheet (PDF)

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2SC5336 Datasheet PDF - California Eastern Labs


部品番号	2SC5336

ダウンロード	2SC5336 Click to download

ファイルサイズ	1035.34 Kbytes

ページ	7 Pages

メーカー	CEL [California Eastern Labs]

ホームページ	http://www.cel.com

Logo

部品情報	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

2SC5336 データシート (HTML) - California Eastern Labs

2SC5336 Datasheet HTML 1Page - California Eastern Labs

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2SC5336 Datasheet HTML 5Page - California Eastern Labs

2SC5336 Datasheet HTML 6Page - California Eastern Labs

2SC5336 Datasheet HTML 7Page - California Eastern Labs

2SC5336 製品詳細

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

FEATURES
• High gain: |S21e|2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the NE85634 / 2SC3357

同様の部品番号 - 2SC5336

メーカー	部品番号	データシート	部品情報
NEC	2SC5336	49Kb / 6P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
	2SC5336-A	137Kb / 2P	RF & Microwave device
	2SC5336-T1	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

同様の説明 - 2SC5336

メーカー	部品番号	データシート	部品情報
NEC	2SC5336	49Kb / 6P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
	2SC5337	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
	2SC5338	71Kb / 10P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
	NE856M02	63Kb / 7P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
California Eastern Labs	NE856M02	206Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5338	186Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
California Eastern Labs	2SC5337	877Kb / 6P	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
Renesas Technology Corp	2SC5337	99Kb / 7P	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
Renesas Technology Corp	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

California Eastern Labs について

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*この情報はあくまでも一般的な情報であり、上記の情報によって生じたいかなる損失や損害についても責任を負うものではありません。

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