VDSS = 1000V

ID25 = 12A

RDS(on) ≤ 1.05Ω

trr ≤ 250ns

N-Channel Enhancement Mode

Avalanche Rated, Low Qg, Low

Intrinsic Rg, High dV/dt, Low trr

Features

• RF capable MOSFETs

• Double metal process for low gate resistance

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS) rated

• Low package inductance

   - easy to drive and to protect

• Fast intrinsic rectifier

Applications

• DC-DC converters

• Switched-mode and resonant-mode power supplies, >500kHz switching

• DC choppers

• 13.5 MHz industrial applications

• Pulse generation

• Laser drivers

• RF amplifiers

Advantages

• Space savings

• High power density