HiPerFET™ Power MOSFET   
F-Class: MegaHertz Switching
   
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
   
Features
• RF capable Mosfets
• Rugged polysilicon gate cell structure
• Double metal process for low gate
    resistance
• Unclamped Inductive Switching (UIS)
    rated
• Low package inductance
    - easy to drive and to protect
• Fast intrinsic rectifier
   
Applications
• DC-DC converters
• Switched-mode and resonant-mode
    power supplies, >500kHz switching
• DC choppers
• Pulse generation
• Laser drivers
   
Advantages
• Easy to mount
• Space savings
• High power density